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| ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Value ST 2N2222 ST 2N2222A Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS 60 30 5 600 625 150 -55 to +150 75 40 6 V V V mA mW O Unit C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 05/10/2005 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=0.1mA, VCE=10V at IC=1mA, VCE=10V at IC=10mA, VCE=10V at IC=150mA, VCE=10V at IC=500mA, VCE=10V Collector Cutoff Current at VCB=50V at VCB=60V at IC=10A ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10A Collector Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Base Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Gain Bandwidth Product at IC=20mA, VCE=20V, f=100MHz Collector Output Capacitance at VCB=10V, f=1MHz Input Capacitance at VCB=0.5V, f=1MHz ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A VBE(sat) VBE(sat) VBE(sat) VBE(sat) fT Cob Cib 0.6 250 1.3 1.2 2.6 2.0 8 30 V V V V MHz pF pF ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A VCE(sat) VCE(sat) VCE(sat) VCE(sat) 0.4 0.3 1.6 1 V V V V ST 2N2222 ST 2N2222A V(BR)EBO V(BR)EBO 5 6 V V ST 2N2222 ST 2N2222A V(BR)CEO V(BR)CEO 30 40 V V ICBO ICBO V(BR)CBO V(BR)CBO 60 75 0.01 0.01 A A V V ST 2N2222 ST 2N2222A hFE hFE hFE hFE hFE hFE 35 50 75 100 30 40 300 Min. Typ. Max. Unit Collector Base Breakdown Voltage SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 05/10/2005 ST 2N2222 / 2N2222A Figure 1. DC Current Gain 1000 700 500 h FE, DC CURRENT GAIN TJ=125 C o 300 200 25o C 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K -55o C VCE=1.0V VCE=10V I C, COLLECTOR CURENT (mA) Figure 2. Collector Saturetion Region VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ= 25o C 0.8 0.6 I C=1.0mA 0.4 10mA 150mA 500mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B, BASE CURENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 05/10/2005 ST 2N2222 / 2N2222A 30 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 3. Capacitances Figure 4. Current-Gain Bandwidth Product 500 VCE=20V TJ= 25o C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 I C, COLLECTOR CURRENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 05/10/2005 |
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